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SGS5N150UFTU

IGBT Transistors SGS10N60RUFD1TU

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SeekIC No. : 00143924 Detail

SGS5N150UFTU: IGBT Transistors SGS10N60RUFD1TU

SGS5N150UFTU Data Sheet

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Part Number:
SGS5N150UFTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1500 V
Collector-Emitter Saturation Voltage : 4.7 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 10 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 50 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220F-3 Packaging : Tube    

Description

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : TO-220F-3
Continuous Collector Current at 25 C : 10 A
Power Dissipation : 50 W
Collector- Emitter Voltage VCEO Max : 1500 V
Collector-Emitter Saturation Voltage : 4.7 V


Parameters:

Technical/Catalog InformationSGS5N150UFTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1500V
Current - Collector (Ic) (Max)10A
Vce(on) (Max) @ Vge, Ic5.5V @ 10V, 5A
Power - Max50W
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGS5N150UFTU
SGS5N150UFTU



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