SGS23N60UFDTU

IGBT Transistors 600V/12A/w/FRD

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SGS23N60UFDTU: IGBT Transistors 600V/12A/w/FRD

floor Price/Ceiling Price

US $ .68~.92 / Piece | Get Latest Price
Part Number:
SGS23N60UFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.92
  • $.77
  • $.71
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 23 A Gate-Emitter Leakage Current : +/- 100 uA
Power Dissipation : 73 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220F-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220F-3
Continuous Collector Current at 25 C : 23 A
Gate-Emitter Leakage Current : +/- 100 uA
Power Dissipation : 73 W


Parameters:

Technical/Catalog InformationSGS23N60UFDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)23A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 12A
Power - Max73W
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGS23N60UFDTU
SGS23N60UFDTU



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