Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC Motor controls, general purpose inverters, robotics, servo controlsSpecifications Symbol Desc...
SGS23N60UFD: Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC...
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12...
Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 23 | A |
Collector Current @ TC = 100 | 12 | A | |
I CM(1) | Pulsed Collector Current | 92 | A |
IF | Diode Continuous Forward Current @ TC = 100 | 12 | A |
IFM | Diode Maximum Forward Current | 92 | A |
PD | Maximum Power Dissipation @ TC = 25 | 73 | W |
Maximum Power Dissipation @ TC = 100 | 29 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.