SGP10N60RUFDTU, US $ .6-.8 , Fairchild Semiconductor, SGP10N60RUFDTU DataSheet download, circuit diagram from SeekIC.com

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SGP10N60RUFDTU: IGBT Transistors Dis Short Circuit Rated IGBT

SGP10N60RUFDTU Data Sheet

US $ .6~.8 / Piece | Get Latest Price

Part Number:: SGP10N60RUFDTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/23

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Product Details

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Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	2.2 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	16 A	Gate-Emitter Leakage Current :	+/- 100 nA
Power Dissipation :	75 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-220-3	Packaging :	Tube

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Package / Case : TO-220-3
Gate-Emitter Leakage Current : +/- 100 nA
Continuous Collector Current at 25 C : 16 A
Power Dissipation : 75 W

Parameters:

Technical/Catalog Information	SGP10N60RUFDTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	16A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 10A
Power - Max	75W
Mounting Type	Through Hole
Package / Case	TO-220
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SGP10N60RUFDTU SGP10N60RUFDTU

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