IGBT Transistors Dis High Perf IGBT
SGM2N60UFTF: IGBT Transistors Dis High Perf IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 2.4 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 2.1 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-223-4 | Packaging : | Reel |
Technical/Catalog Information | SGM2N60UFTF |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 2.4A |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 1.2A |
Power - Max | 2.1W |
Mounting Type | Surface Mount |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SGM2N60UFTF SGM2N60UFTF |