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SGM2014AM

Features: • Low voltage operation• Low noise: NF = 1.5dB (typ.) at 900MHz• High gain: Ga = 18dB (typ.) at 900MHz• Low cross-modulation• High stability• Built-in gate-protection diodeApplicationUHF band amplifier, mixer and oscillatorSpecifications• Drain t...

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SeekIC No. : 004489435 Detail

SGM2014AM: Features: • Low voltage operation• Low noise: NF = 1.5dB (typ.) at 900MHz• High gain: Ga = 18dB (typ.) at 900MHz• Low cross-modulation• High stability• Built-in g...

SGM2014AM Data Sheet

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Part Number:
SGM2014AM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Description



Features:

• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode




Application

UHF band amplifier, mixer and oscillator


Specifications

• Drain to source voltage                  VDSX                   12 V
• Gate 1 to source voltage                VG1S                  5 V
• Gate 2 to source voltage                VG2S                  5 V
• Drain current                                  ID                     55 mA
• Allowable power dissipation           PD                 150 mW
• Channel temperature                     Tch                   150
• Storage temperature                     Tstg    55 to +150  


Description

The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This SGM2014AM FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.




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