IGBT Transistors 600V/20A/WFRD
SGH40N60UFDM1TU: IGBT Transistors 600V/20A/WFRD
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 20...
Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 20...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 160 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3P-3 |
Packaging : | Tube |