Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 20A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC motor controls, general purpose inverters, robotics, and servo controls.PinoutSpecifications ...
SGH40N60UFD: Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 20A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC...
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 20...
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
SGH40N60UFDTU | Full Production | RoHS Compliant | $3.30 | TO-3PN | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G40N60 Line 3: UFD&3 |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product SGH40N60UFD is available. Click here for more information . |
Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VCES | Gate-Emitter Voltage | ± 20 | V |
IC | Collector Current @ TC = 25 | 40 | A |
Collector Current @ TC = 100 | 20 | A | |
I CM(1) | Pulsed Collector Current | 160 | A |
IF | Diode Continuous Forward Current @ TC = 100 | 15 | A |
IFM | Diode Maximum Forward Current | 160 | A |
PD | Maximum Power Dissipation @ TC = 25 | 160 | W |
Maximum Power Dissipation @ TC = 100 | 64 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
The features of SGH40N60UFD are: (1)High speed switching; (2)Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A; (3)High input impedance; (4)CO-PAK, IGBT with FRD : trr = 42ns (typ.).
The following is about the absolute maximum ratings of SGH40N60UFD: (1)Collector-Emitter Voltage: 600 V; (2)Gate-Emitter Voltage: ± 20 V; (3)Collector Current @ TC = 25°C: 40 A; (4)Collector Current @ TC = 100°C: 20 A; (5)Pulsed Collector Current: 160 A; (6)Diode Continuous Forward Current @ TC = 100°C: 15 A; (7)Diode Maximum Forward Current: 160 A; (8)Maximum Power Dissipation @ TC = 25°C: 160 W; (9)Maximum Power Dissipation @ TC = 100°C: 64 W; (10)Operating Junction Temperature: -55 to +150 °C; (11)Storage Temperature Range: -55 to +150 °C; (12)Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds: 300 °C.
The electrical characteristics of the SGH40N60UFD are: (1)Collector-Emitter Breakdown Voltage: 600V at VGE = 0V, IC = 250uA; (2)Temperature Coefficient of Breakdown Voltage: 0.6 V/°C at VGE = 0V, IC = 1mA; (3)Collector Cut-Off Current: 250 uA at VCE = VCES, VGE = 0V; (4)IGES G-E Leakage Current: ± 100 nA VGE = VGES, VCE = 0V.