IGBT Transistors
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Features: • Short circuit rated 10µs @ TC = 100°C, VGE = 15V• High speed switchi...
Features: • Short circuit rated 10s @ TC = 100°C, VGE = 15V• High speed switching̶...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 25 V | ||
Continuous Collector Current at 25 C : | 32 A | Gate-Emitter Leakage Current : | 100 uA | ||
Power Dissipation : | 230 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3P-3 | Packaging : | Tube |