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SGH20N120RUFD

Features: • Short circuit rated 10s @ TC = 100°C, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.3 V @ IC = 20A• High input impedance• CO-PAK, IGBT with FRD : trr = 80ns (typ.)ApplicationAC & DC motor controls, general purpose inverters, r...

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SGH20N120RUFD: Features: • Short circuit rated 10s @ TC = 100°C, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.3 V @ IC = 20A• High input impedance• CO-PAK, ...

SGH20N120RUFD Data Sheet

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Part Number:
SGH20N120RUFD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• Short circuit rated 10s @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V CE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 80ns (typ.)


Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.


Pinout

Connection Diagram


Specifications

Symbol Description SGH20N120RUFD Units
VCES Collector-Emitter Voltage 1200 V
VCES Gate-Emitter Voltage ± 25 V
IC Collector Current @ TC = 25 32 A
Collector Current @ TC = 100 20 A
I CM(1) Pulsed Collector Current 60 A
IF Diode Continuous Forward Current @ TC = 100 20 A
IFM Diode Maximum Forward Current 120 A
TSC Short Circuit Withstand Time @ TC = 100 10 s
PD Maximum Power Dissipation @ TC = 25 230 W
Maximum Power Dissipation @ TC = 100 92 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300



Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness.

The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.




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