IGBT Transistors Discrete Hi-P IGBT
SGF80N60UFTU: IGBT Transistors Discrete Hi-P IGBT
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Features: * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input...
Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40A...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3PF-3 | Packaging : | Tube |
Technical/Catalog Information | SGF80N60UFTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
Power - Max | 110W |
Mounting Type | Through Hole |
Package / Case | TO-3PF |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SGF80N60UFTU SGF80N60UFTU |