Features: * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 50nS (typ.)Application* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo Controls* Power Supply* Lamp BallastSpecifications Symbo...
SGF80N60UFD: Features: * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=40A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 50nS (typ.)Application* AC & DC Motor controls* General...
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40A...
Symbol |
Characteristics |
Rating |
Units |
VCES |
Collector-Emitter Voltage |
600 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ Tc = 25°C |
80 |
A |
Collector Current @ Tc = 100°C |
40 |
A | |
ICM (1) |
Pulsed Collector Current |
220 |
A |
IF |
Diode Continuous Forward Current @ Tc = 100°C |
25 |
A |
IFM |
Diode Maximum Forward Current |
280 |
A |
PD |
Maximum Power Dissipation @Tc = 25°C |
115 |
W |
Maximum Power Dissipation @Tc = 100°C |
45 |
W | |
Tj |
Operating Junction Temperature |
-55 ~ 150 |
°C |
Tstg |
Storage Temperature Range |
-55 ~ 150 |
°C |
TL |
Maximum Lead Temp. For Soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
Notes: (1) Repetitive rating : Pulse width limited by max. junction temperature