Features: • Single Fixed 3V Supply• No Dropping Resistor Required• Patented Self-Bias Circuitry• P1dB = 12.7 dBm at 1950 MHz• OIP3 = 27 dBm at 1950 MHz• Robust 1000V ESD, Class 1C HBMApplication• PA Driver Amplifier• Cellular, PCS, GSM, UMTS, WCDMA...
SGC-4386Z: Features: • Single Fixed 3V Supply• No Dropping Resistor Required• Patented Self-Bias Circuitry• P1dB = 12.7 dBm at 1950 MHz• OIP3 = 27 dBm at 1950 MHz• Robust 10...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Absolute Limit |
Max Device Current (ICE) Max Device Voltage (VCE) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. |
110 mA 4.5 V +18 dBm +150 -40 to +85 +150 |
Series | SGC |
Frequency (MHz) | 50 to 4000 |
Gain (dB) | 16.7 |
NF (dB) | 3.7 |
OP1dB (dBm) | 13.4 |
OIP3 (dBm) | 29.5 |
Vcc (V) | 3 |
Id (mA) | 54 |
Package/Size (Dim in mm) | SOT-86 |
Sirenza Microdevices' SGC-4386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC-4386Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC-4386Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms.