Features: • Single, Fixed 3V Supply• No Dropping Resistor Required• Patented Self-Bias Circuitry• P1dB = 10.1 dBm at 1950 MHz• OIP3 = 23 dBm at 1950 MHz• Robust 1000V ESD, Class 1C HBMApplication• PA Driver Amplifier• Cellular, PCS, GSM, UMTS, WCDMA&...
SGC-2363Z: Features: • Single, Fixed 3V Supply• No Dropping Resistor Required• Patented Self-Bias Circuitry• P1dB = 10.1 dBm at 1950 MHz• OIP3 = 23 dBm at 1950 MHz• Robust 1...
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Parameter | Absolute Limit |
Max Device Current (ICE) | 55 mA |
Max Device Voltage (VCE) | 4.5 V |
Max. RF Input Power* (See Note) | +18 dBm |
Max. Junction Temp. (TJ) | +150 |
Operating Temp. Range (TL) | -40 to +85 |
Max. Storage Temp. | +150 |
*Note: Load condition, ZL = 50 Ohms
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Series | SGC |
Frequency (MHz) | 50 to 4000 |
Gain (dB) | 17 |
NF (dB) | 3.7 |
OP1dB (dBm) | 10.4 |
OIP3 (dBm) | 23 |
Vcc (V) | 3 |
Id (mA) | 26 |
Package/Size (Dim in mm) | SOT-363 |
Sirenza Microdevices' SGC-2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC-2363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC-2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms.