Features: · Available in Lead Free, RoHS compliant, & Green Packaging· High reliability SiGe HBT Technology· Robust Class 1C ESD · Simple and small size · P1dB = 18.5 dBm @ 1950MHz· IP3 = 32 dBm @ 1950MHz· Low Thermal Resistance = 60 C/WApplication· 5V applications· LO buffer amp· RF pre-drive...
SGB-6533Z: Features: · Available in Lead Free, RoHS compliant, & Green Packaging· High reliability SiGe HBT Technology· Robust Class 1C ESD · Simple and small size · P1dB = 18.5 dBm @ 1950MHz· IP3 = 32 dBm...
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Parameters |
Value |
Unit |
Current (Ic total) |
150 |
mA |
Device Voltage (VD) |
6.5 |
V |
Power Dissipation |
0.75 |
W |
Operating Lead Temperature (TL) |
-40 to +85 |
|
RF Input Power, Zload = 50 ohm |
15 |
dBm |
RF Input Power, Zload > 10:1 VSWR |
7 |
dBm |
Storage Temperature Range |
-40 to +150 |
|
Operating Junction Temperature (TJ) |
+150 |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one.Bias conditions should also satisfy the following expression:IDVD < (TJ - TL ) / RTH, j-l
Sirenza Microdevices! SGB-6533 is a highperformance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6533 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-6533 is available in a RoHS Compliant and Green package with matte tin finish, designated by the "Z"package suffix.