Features: · 60V minimum breakdown voltage· 500mA current capability per diode· Fast switching speeds: typically less than 10ns· Low leakage currentSpecificationsBreakdown Voltage (VBR) ...60V Output Current (IO), TC = 25°CContinuous ................................................................5...
SG6508: Features: · 60V minimum breakdown voltage· 500mA current capability per diode· Fast switching speeds: typically less than 10ns· Low leakage currentSpecificationsBreakdown Voltage (VBR) ...60V Output...
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Breakdown Voltage (VBR) ...60V Output Current (IO), TC = 25°C
Continuous ................................................................500mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................150°C
Storage Temperature Range ............................-65°C to 200°C
Note 1. Exceeding these ratings could cause damage to the device.
The SG6508 of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
Each SG6508's configuration consists of either common anode diodes,common cathode diodes, or a combination of common anode and common cathode diodes.
Individual diodes within the array have 60V minimum breakdown voltage, SG6508, can handle 500mA of current and typically switch in less than 10 nanoseconds.
Each of the SG6508's configurations is available in ceramic DIP or ceramic flatpack and can be processed to JANTXV, JANTX, or JAN flows at Linfinity's MIL-S-19500 facility.