SG6507

Features: · 60V minimum breakdown voltage· 500mA current capability per diode· Fast switching speeds: typically less than 10ns· Low leakage currentSpecificationsBreakdown Voltage (VBR) ...60V Output Current (IO), TC = 25°CContinuous ................................................................5...

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SeekIC No. : 004489176 Detail

SG6507: Features: · 60V minimum breakdown voltage· 500mA current capability per diode· Fast switching speeds: typically less than 10ns· Low leakage currentSpecificationsBreakdown Voltage (VBR) ...60V Output...

floor Price/Ceiling Price

Part Number:
SG6507
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Description



Features:

· 60V minimum breakdown voltage
· 500mA current capability per diode
· Fast switching speeds: typically less than 10ns
· Low leakage current



Specifications

Breakdown Voltage (VBR) ...60V Output Current (IO), TC = 25°C
Continuous ................................................................500mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................150°C
Storage Temperature Range ............................-65°C to 200°C
Note 1. Exceeding these ratings could cause damage to the device.



Description

The SG6507 of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

Each SG6507's configuration consists of either common anode diodes,common cathode diodes, or a combination of common anode and common cathode diodes.

Individual diodes within the array have 60V minimum breakdown voltage, SG6507, can handle 500mA of current and typically switch in less than 10 nanoseconds.

Each of the SG6507 configurations is available in ceramic DIP or ceramic flatpack and can be processed to JANTXV, JANTX, or JAN flows at Linfinity's MIL-S-19500 facility.




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