SE1031W

`Single +3.3 V power supply
`Power dissipation = 110 mW (typ)
`Input nois e current = 360 nA rms when used with a 0.5 pF detector
`Transimpedance gain = 2.3 k into a 50W load (differential)
`On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk
`Differential 50 W outputs
`Bandwidth (-3 dB) = 2.4 GHz
`Wide data rate range = 50 Mb/s to 2.5 Gb/s
`Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC)
`Minimal external components, supply decoupling only
`Operating junction temperature range = -40°C to +125°C
`Equivalent to Nortel Networks AB89-A4A

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below.

SiGe Semiconductor offers a portfolio of optical networking ICs SE1031W for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s.

SiGe Semiconductor's SE1031W is a fully integrated,silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features differential outputs,and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram is shown after the functional description, on page 3.

SE1031W's Noise performance is optimized for 2.5 Gb/s operation, with a calculated rms noise based sensitivity of 26 dBm for 10^-10 bit error rate, achieved using a detector with 0.5 pF capacitance and a responsivity of 0.9 A/W, with an infinite extinction ratio source.