SE1010W

 ` Single +5 V power supply
 ` Input noise current = 45 nA rms when used with a 0.5 pF detector
 ` Transimpedance gain = 5.6 k  into a 50  load (single-ended)
 ` On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk
 ` 50   single-ended or 100   differential wire bond selectable outputs
 ` Bandwidth (-3 dB) = 400 MHz (min)
 ` Wide data rate range = 10 Mb/s to 622 Mb/s
 ` High input bias level = 2 V
 ` Minimal external components, supply decoupling only
 ` Operating junction temperature range = -40°C to +95°C
 ` Equivalent to Nortel Networks AB53

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below.

SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s.

SiGe Semiconductor's SE1010W is a fully integrated,silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features single-ended or differential outputs, selectable by wire bond options,and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. For differential outputs, a decoupling capacitor on the supply is the only
external circuitry required.

Noise performance of the SE1010W is optimized for 622 Mb/s operation, with a calculated rms noise based sensitivity of 35 dBm for 10^-10 bit error rate, achieved using a detector with 0.5 pF capacitance and a responsivity of 0.9 A/W, with an infinite extinction ratio source.