Schottky (Diodes & Rectifiers) Silicon Carbide Schottky Diode
SDT10S60: Schottky (Diodes & Rectifiers) Silicon Carbide Schottky Diode
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Product : | Schottky Silicon Carbide Diodes | Peak Reverse Voltage : | 600 V |
Forward Continuous Current : | 10 A | Max Surge Current : | 31 A |
Configuration : | Single | Forward Voltage Drop : | 1.7 V |
Maximum Reverse Leakage Current : | 350 uA | Operating Temperature Range : | - 55 C to + 175 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |
Parameter |
Symbol |
Value |
Unit |
Continuous forward current, TC=100°C |
IF |
10 |
A |
RMS forward current, f=50Hz |
IFRMS |
14.1 | |
Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms |
IFSM |
31 | |
Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 |
IFRM |
39 | |
Non repetitive peak forward current tp=10s, TC=25°C |
IFMAX |
100 | |
i 2t value, TC=25°C, tp=10ms |
Ji2dt |
4.8 |
A2s |
Repetitive peak reverse voltage |
VRRM |
600 |
V |
Surge peak reverse voltage |
VRSM |
600 | |
Power dissipation, TC=25°C |
Ptot |
75 |
W |
Operating and storage temperature |
Tj,Tstg |
-55to+175 |
Technical/Catalog Information | SDT10S60 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Diode Type | Silicon Carbide |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 350A @ 600V |
Speed | No Recovery Time > 500mA (Io) |
Mounting Type | Through Hole, Radial |
Package / Case | TO-220-2 |
Packaging | Tape & Reel (TR) |
Capacitance @ Vr, F | 350pF @ 0V, 1MHz |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SDT10S60 SDT10S60 |