SDT10S30

Recovery Time :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Forward Continuous Current : 10 A
Maximum Reverse Leakage Current : 200 uA
Operating Temperature Range : - 55 C to + 175 C
Package / Case : TO-220
Forward Voltage Drop : 1.7 V
Peak Reverse Voltage : 300 V
Max Surge Current : 36 A
Maximum Power Dissipation : 65 W


Features:

· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· No forward recovery


Specifications

Parameter	Symbol	Value	Unit
Continuous forward current, TC=100	IF	10	A
RMS forward current, f=50Hz	IFRMS	14
Surge non repetitive forward current, sine halfwave TC=25, tp=10ms	IFSM	36
Repetitive peak forward current Tj=150, TC=100, D=0.1	IFRM	45
Non repetitive peak forward current tp=10µs, TC=25	IFMAX	100
i 2t value, TC=25, tp=10ms	i2dt	6.5	A²s
Repetitive peak reverse voltage	VRRM	300	V
Surge peak reverse voltage	VRSM	300
Power dissipation, TC=25	Ptot	65	W
Operating and storage temperature	Tj , Tstg	-55... +175

Parameters:

Technical/Catalog Information	SDT10S30
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	300V
Current - Average Rectified (Io)	10A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	200A @ 300V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220AC
Packaging	Tube
Capacitance @ Vr, F	600pF @ 0V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SDT10S30 SDT10S30 SDT10S30IN ND SDT10S30INND SDT10S30IN