Transistors RF Bipolar Power RF Transistor
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Packaging : | Tray |
Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain Source Voltage | 125 | V |
VDGR | Drain-Gate Voltage (RGS = 1M) | 125 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Drain Current | 40 | A |
PDISS | Power Dissipation | 500 | W |
Tj | Max. Operating Junction Temperature | 200 | |
TSTG | Storage Temperature | -65 to 150 |
The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD293 2 is intended for use in 50V dc large signal applications up to 250 MHz
Technical/Catalog Information | SD2932 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 125V |
Current Rating | 40A |
Package / Case | M244 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD2932 SD2932 497 5468 ND 4975468ND 497-5468 |