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SeekIC No. : 00220515 Detail

SD2900: Transistors RF MOSFET Power N-Ch 65 Volt 0.9 Amp

SD2900 Data Sheet

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Part Number:: SD2900
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/7

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Transistors RF MOSFET Power N-Ch 65 Volt 2.5 Amp

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	500 MHz	Gain :	16 dB at 400 MHz
Output Power :	5 W	Drain-Source Breakdown Voltage :	65 V
Continuous Drain Current :	900 mA	Gate-Source Breakdown Voltage :	+/- 20 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	M113
Packaging :	Bulk

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Bulk
Frequency : 500 MHz
Output Power : 5 W
Continuous Drain Current : 900 mA
Gain : 16 dB at 400 MHz
Package / Case : M113

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	65	V
V_DGR	Drain-Gate Voltage (R_GS = 1M)	65	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	900	mA
P_DISS	Power Dissipation	21.9	W
T_j	Max. Operating Junction Temperature	200	^oC
T_STG	Storage Temperature	-65 to 150	^oC

Description

The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz

Parameters:

Technical/Catalog Information	SD2900
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	65V
Current Rating	900mA
Package / Case	M113
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD2900 SD2900 497 5462 ND 4975462ND 497-5462

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SD2900

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