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SD2900

Transistors RF MOSFET Power N-Ch 65 Volt 0.9 Amp

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SeekIC No. : 00220515 Detail

SD2900: Transistors RF MOSFET Power N-Ch 65 Volt 0.9 Amp

SD2900 Data Sheet

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Part Number:
SD2900
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 500 MHz Gain : 16 dB at 400 MHz
Output Power : 5 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 900 mA Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : M113
Packaging : Bulk    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Bulk
Frequency : 500 MHz
Output Power : 5 W
Continuous Drain Current : 900 mA
Gain : 16 dB at 400 MHz
Package / Case : M113


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 65 V
VDGR Drain-Gate Voltage (RGS = 1M) 65 V
VGS Gate-Source Voltage ±20 V
ID Drain Current 900 mA
PDISS Power Dissipation 21.9 W
Tj Max. Operating Junction Temperature 200 oC
TSTG Storage Temperature -65 to 150 oC



Description

The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz




Parameters:

Technical/Catalog InformationSD2900
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 65V
Current Rating900mA
Package / CaseM113
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SD2900
SD2900
497 5462 ND
4975462ND
497-5462



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