SD1477

Configuration :
Maximum DC Collector Current :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Power Dissipation : 270 W
Collector- Emitter Voltage VCEO Max : 18 V
Continuous Collector Current : 20 A
Maximum Operating Frequency : 175 MHz
Package / Case : M111


Features:

.175 MHz
.12.5 VOLTS
.COMMON EMITTER
.P_OUT = 100 W MIN. WITH 6.0 dB GAIN


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	36	V
VCEO	Collector-Emitter Voltage	18	V
VCES	Collector-Emitter Voltage	36	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Device Current	20	A
PDISS	Power Dissipation	270	W
TJ	Junction Temperature	+200
TSTG	Storage Temperature	65 to 150

Description

The SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF FM communications. This device utilizes diffused emitter resistors to withstand extremely high VSWR under rated operating conditions, and is internally input matched to optimize power gain and efficiency over the 136 - 175 MHz band.

Parameters:

Technical/Catalog Information	SD1477
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	20A
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	18V
Gain	6dB
Power - Max	270W
Compression Point (P1dB)	-
Package / Case	M111
Packaging	Tray
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD1477 SD1477 497 6723 ND 4976723ND 497-6723