Transistors RF Bipolar Power NPN 12.5V 30MHz
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Configuration : | Single Dual Source | Collector- Emitter Voltage VCEO Max : | 18 V | ||
Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 20 A | ||
Maximum DC Collector Current : | 20 A | Power Dissipation : | 270 W | ||
Package / Case : | M174 | Packaging : | Bulk |
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
36 |
V |
VCEO |
Collector-Emitter Voltage |
18 |
V |
VEBO |
Emitter-Base Voltage |
4.0 |
V |
IC |
Device Current |
20 |
A |
PDISS |
Power Dissipation |
270 |
W |
TJ |
Junction Temperature |
+200 |
°C |
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions.
Technical/Catalog Information | SD1405 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | - |
Current - Collector (Ic) (Max) | 20A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 18V |
Gain | 13dB |
Power - Max | 270W |
Compression Point (P1dB) | - |
Package / Case | M174 |
Packaging | Bulk |
Drawing Number | * |
Mounting Type | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD1405 SD1405 497 5457 ND 4975457ND 497-5457 |