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SD1407

Transistors RF Bipolar Power RF Transistor

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SeekIC No. : 00218287 Detail

SD1407: Transistors RF Bipolar Power RF Transistor

SD1407 Data Sheet

floor Price/Ceiling Price

US $ 26.4~39.6 / Piece | Get Latest Price
Part Number:
SD1407
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $39.6
  • $33
  • $29.7
  • $26.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Maximum Operating Frequency : 30 MHz Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V Continuous Collector Current : 20 A
Power Dissipation : 270 W Package / Case : SOT-123
Packaging : Tray    

Description

Configuration :
Maximum DC Collector Current :
Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Power Dissipation : 270 W
Maximum Operating Frequency : 30 MHz
Continuous Collector Current : 20 A
Package / Case : SOT-123


Application

30 MHz
28 VOLTS
IMD -30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT = 125 W MIN. WITH 15 dB GAIN


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

65

V

VCEO

Collector-Emitter Voltage

36

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

20

A

PDISS

Power Dissipation

270

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

- 65 to +150

°C




Description

The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability.




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