Transistors RF Bipolar Power RF Transistor
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Maximum Operating Frequency : | 30 MHz | Collector- Emitter Voltage VCEO Max : | 35 V |
Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 20 A |
Power Dissipation : | 270 W | Package / Case : | SOT-123 |
Packaging : | Tray |
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
65 |
V |
VCEO |
Collector-Emitter Voltage |
36 |
V |
VEBO |
Emitter-Base Voltage |
4.0 |
V |
IC |
Device Current |
20 |
A |
PDISS |
Power Dissipation |
270 |
W |
TJ |
Junction Temperature |
+200 |
°C |
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability.