Transistors RF Bipolar Power RF Transistor
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| Packaging : | Tray |
| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
60 |
V |
| VCEO | Collector-Emitter Voltage |
35 |
V |
| VEBO | Emitter-Base Voltage |
4.0 |
V |
| IC | Device Current |
10 |
A |
| PDISS | Power Dissipation |
140 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 150 |
The SD1458 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and band III television transmitters and transposers.