Transistors RF Bipolar Power RF Transistor
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Packaging : | Tray |
Symbol | Parameter |
Value |
Unit |
VCBO | Collector-Base Voltage |
36 |
V |
VCEO | Collector-Emitter Voltage |
18 |
V |
VEBO | Emitter-Base Voltage |
3.5 |
V |
IC | Device Current |
12.0 |
A |
PDISS | Power Dissipation |
183 |
W |
TJ | Junction Temperature |
+200 |
|
TSTG | Storage Temperature |
65 to 150 |
The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.
Technical/Catalog Information | SD1446 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | - |
Current - Collector (Ic) (Max) | 12A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 18V |
Gain | 10dB |
Power - Max | 183W |
Compression Point (P1dB) | - |
Package / Case | M113 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD1446 SD1446 497 5458 ND 4975458ND 497-5458 |