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SD1127

Features: DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAINGROUNDED EMITTER CONFIGURATIONSpecifications Symbol Parameter Value Unit PDISS Total Power Dissipation * 8.0 W VCBO Collector-base Voltage 36 V V...

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SD1127: Features: DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAINGROUNDED EMITTER CONFIGURATIONSpecifications Symbol Parameter Value Unit ...

SD1127 Data Sheet

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Part Number:
SD1127
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT
4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN
GROUNDED EMITTER CONFIGURATION


Specifications

Symbol

Parameter

Value

Unit

PDISS

Total Power Dissipation *

8.0

W

VCBO

Collector-base Voltage

36

V

VCEO

Collector-emitter Voltage (IB=0)

18

V

IC

Collector Current*

0.64

A

TSTG

Storage Temperature

- 65 to +200

°C

TJ

Junction Temperature

200

°C




Description

THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION.




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