PinoutSpecificationsDescriptionThe SD1100 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)motor controls;(2)line drivers;(3)power supplies. Features of the SD1100 are:(1)gate stand-off, +/-40 V min.;(2)P-channel complements availab...
SD1100: PinoutSpecificationsDescriptionThe SD1100 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)motor controls;(2)line drivers;(3)power su...
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The SD1100 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)motor controls;(2)line drivers;(3)power supplies.
Features of the SD1100 are:(1)gate stand-off, +/-40 V min.;(2)P-channel complements available, VP0540 series;(3)wide varity of packages.
The absolute maximum ratings of the SD1100 can be summarized as:(1)drain source voltage: 450 V;(2)gate-source voltage: +/-40 V;(3)peak pulsed drain current: 0.25 A;(4)maximum power dissipation: 0.5 to 6.88 W;(5)operating junction and storage temperature range: -55 to +150 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +260 . If you want to know more information about the SD1100, please download the datasheet in www.seekic.com or www.chinaicmart.com .