Features: High Output IP3 : +24dBm High Gain : Up to 21dB Cascadable 50 Ohm : 1.5:1 VSWR Patented GaAs HBT Technology Operates From Single Supply Low Thermal Resistance PackageApplication Cellular, PCS, CDPD Wireless Data, SONETSpecifications Parameter AbsoluteMaximum Device Curren...
SCA-7: Features: High Output IP3 : +24dBm High Gain : Up to 21dB Cascadable 50 Ohm : 1.5:1 VSWR Patented GaAs HBT Technology Operates From Single Supply Low Thermal Resistance PackageApplication Cellular,...
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|
Parameter |
Absolute Maximum |
|
Device Current |
75mA |
|
Power Dissipation |
350mW |
|
RF Input Power |
100mW |
|
Junction Temperature |
+200C |
|
Operating Temperature |
-45C to +85C |
|
Storage Temperature |
-65C to +150C |
Stanford Microdevices' SCA-7 is a high performance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor- mance up to 3 GHz. The heterojunction increases break-down voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 40mA is +24dBm.
These unconditionally stable amplifiers provides 21dB of gain and +12dBm of 1dB compressed power and requires only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation.
This MMIC SCA-7 is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.