Features: High Output IP3 : +23dBmHigh Gain : Up to 21dBCascadable 50 Ohm : 1.5:1 VSWRPatented GaAs HBT TechnologyOperates From Single SupplyLow Thermal Resistance PackageApplicationCellular, PCS, CDPDWireless Data, SONETSpecifications Parameter AbsoluteMaximum Device Current 75m...
SCA-17: Features: High Output IP3 : +23dBmHigh Gain : Up to 21dBCascadable 50 Ohm : 1.5:1 VSWRPatented GaAs HBT TechnologyOperates From Single SupplyLow Thermal Resistance PackageApplicationCellular, PCS, C...
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Parameter |
Absolute Maximum |
Device Current |
75mA |
Power Dissipation |
350mW |
RF Input Power |
100mW |
Junction Temperature |
+200C |
Operating Temperature |
-45C to +85C |
Storage Temperature |
-65C to +150C |
Stanford Microdevices' SCA-17 is a high performance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor mance up to 3 GHz. The heterojunction increases break down voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 40mA is +23dBm.
These unconditionally stable amplifiers provides 21dB of gain and +12dBm of 1dB compressed power and requires only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation.
This MMIC SCA-17 is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.