Features: • MMIC BiCMOS predriver amplifier• Low voltage 2.7 to 5.5V single supply operation• 820 to 905MHz bandwidth• High power gain >20dB• High power output >23dBm (typical) @ 3V• Efficiency = 35% (typical)• Wide gain control range: >32dB•...
SA910: Features: • MMIC BiCMOS predriver amplifier• Low voltage 2.7 to 5.5V single supply operation• 820 to 905MHz bandwidth• High power gain >20dB• High power output >2...
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SYMBOL | PARAMETER | RATING | UNITS |
VCC1/VCCBIAS | DC supply voltages | -0.3 to +6.0 | V |
Voltage applied to any other pin1 | -0.3 to (VCC1 + 0.3) | V | |
PD | Power dissipation | 1.0 | W |
PIN | Input drive power | 5 | mW |
PDET | Input detect power | 20 | mW |
PL | Load power | 500 | mW |
TSTG | Storage temperature range | -65 to +150 | °C |
The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the device draws less than 10mA of current. The SA910 is fabricated using Philips QUBiC BiCMOS process.