Features: · Integrated gate protection diodes· Low noise figure· High gain· Biasing network on chip· Improved cross modulation at gain reduction· High AGC-range· SMD packageApplication·Low noise gain controlled input stages in UHF-and VHF- tuner with 12 V supply voltage.PinoutSpecifications P...
S886T: Features: · Integrated gate protection diodes· Low noise figure· High gain· Biasing network on chip· Improved cross modulation at gain reduction· High AGC-range· SMD packageApplication·Low noise gai...
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Features: · Element pitch: 0.2 mm pitch × 256 ch·5 V power supply operation· Simultaneous integrat...
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Drain - source voltage |
VDS |
16 |
V | |
Drain current |
ID |
30 |
mA | |
Gate 1/Gate 2 - source peak current |
±IG1/G2SM |
10 |
mA | |
Gate 1/Gate 2 - source voltage |
±IG1/G2SM |
7.5 |
V | |
Total power dissipation |
Tamb 60 |
Ptot |
200 |
mW |
Channel temperature |
TCh |
150 |
||
Storage temperature range |
Tstg |
55 to +150 |