Features: · Element pitch: 0.2 mm pitch × 256 ch·5 V power supply operation· Simultaneous integration by using a charge amplifier array·Sequential readout with a shift register (Data rate: 1 MHz Max.)·Low dark current due to zero-bias photodiode operation· Integrated clamp circuit allows low noise...
S8865-256: Features: · Element pitch: 0.2 mm pitch × 256 ch·5 V power supply operation· Simultaneous integration by using a charge amplifier array·Sequential readout with a shift register (Data rate: 1 MHz Max...
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Features: · Element pitch: 0.2 mm pitch × 256 ch·5 V power supply operation· Simultaneous integrat...
Parameter |
Symbol |
Rated value |
Unit |
Supply voltage |
Vdd |
-0.3 to +6 |
V |
Reference voltage |
VREF |
-0.3 to +6 |
V |
Photodiode voltage |
Vpd |
-0.3 to +6 |
V |
Gain selection terminal voltage |
VGAIN |
-0.3 to +6 |
V |
Master/slave selection voltage |
VMS |
-0.3 to +6 |
V |
Clock pulse voltage |
V(CLK) |
-0.3 to +6 |
V |
Reset pulse voltage |
V(RESET) |
-0.3 to +6 |
V |
External start pulse voltage |
V(EXTST) |
-0.3 to +6 |
V |
Operating temperature *2 |
TOPR |
-5 to +60 |
|
Storage temperature |
TSTG |
-10 to +70 |
S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The S8865-256 and S8865-256G signal processing circuit chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. For X-ray detection applications, types with fluorescent paper affixed on the active area are also available.