DescriptionThe S8855 is microwave power GaAs FET.It is suitable for Ku-BAND amplifier. Features of the S8855 are:(1)high power:P1dB=31.5dBm at f=15GHz;(2)high gain:G1dB=6.5dB at f=15GHz;(3)ion implantation. The absolute maximum ratings of the S8855 can be summarized as:(1)drain-source voltage:15...
S8855: DescriptionThe S8855 is microwave power GaAs FET.It is suitable for Ku-BAND amplifier. Features of the S8855 are:(1)high power:P1dB=31.5dBm at f=15GHz;(2)high gain:G1dB=6.5dB at f=15GHz;(3)ion impl...
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The S8855 is microwave power GaAs FET.It is suitable for Ku-BAND amplifier.
Features of the S8855 are:(1)high power:P1dB=31.5dBm at f=15GHz;(2)high gain:G1dB=6.5dB at f=15GHz;(3)ion implantation.
The absolute maximum ratings of the S8855 can be summarized as:(1)drain-source voltage:15V;(2)gate-source voltage:-5V;(3)drain current:1.3A;(4)total power dissipation:9W;(5)channel temperature:175;(6)storage temperature:-65 to +175.
If you want to know more information such as the electrical characteristics about the S8855, please download the datasheet in www.seekic.com or www.chinaicmart.com .