S8855

DescriptionThe S8855 is microwave power GaAs FET.It is suitable for Ku-BAND amplifier. Features of the S8855 are:(1)high power:P1dB=31.5dBm at f=15GHz;(2)high gain:G1dB=6.5dB at f=15GHz;(3)ion implantation. The absolute maximum ratings of the S8855 can be summarized as:(1)drain-source voltage:15...

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SeekIC No. : 004483374 Detail

S8855: DescriptionThe S8855 is microwave power GaAs FET.It is suitable for Ku-BAND amplifier. Features of the S8855 are:(1)high power:P1dB=31.5dBm at f=15GHz;(2)high gain:G1dB=6.5dB at f=15GHz;(3)ion impl...

floor Price/Ceiling Price

Part Number:
S8855
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The S8855 is microwave power GaAs FET.It is suitable for Ku-BAND amplifier.

Features of the S8855 are:(1)high power:P1dB=31.5dBm at f=15GHz;(2)high gain:G1dB=6.5dB at f=15GHz;(3)ion implantation.

The absolute maximum ratings of the S8855 can be summarized as:(1)drain-source voltage:15V;(2)gate-source voltage:-5V;(3)drain current:1.3A;(4)total power dissipation:9W;(5)channel temperature:175;(6)storage temperature:-65 to +175.

If you want to know more information such as the electrical characteristics about the S8855, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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