DescriptionThe S8850A is microwave power GaAs FET.It is suitable for Ku-BAND amplifier. Features of the S8850A are:(1)high power:P1dB=21.5dBm at f=15GHz;(2)high gain:G1dB=9.0dB at f=15GHz;(3)ion implantation. The absolute maximum ratings of the S8850A can be summarized as:(1)drain-source voltage...
S8850A: DescriptionThe S8850A is microwave power GaAs FET.It is suitable for Ku-BAND amplifier. Features of the S8850A are:(1)high power:P1dB=21.5dBm at f=15GHz;(2)high gain:G1dB=9.0dB at f=15GHz;(3)ion im...
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The S8850A is microwave power GaAs FET.It is suitable for Ku-BAND amplifier.
Features of the S8850A are:(1)high power:P1dB=21.5dBm at f=15GHz;(2)high gain:G1dB=9.0dB at f=15GHz;(3)ion implantation.
The absolute maximum ratings of the S8850A can be summarized as:(1)drain-source voltage:15V;(2)gate-source voltage:-5V;(3)drain current:0.125A;(4)total power dissipation:1.0W;(5)channel temperature:175;(6)storage temperature:-65 to +175.
If you want to know more information such as the electrical characteristics about the S8850A, please download the datasheet in www.seekic.com or www.chinaicmart.com .