S8837A

DescriptionThe S8837A is microwave power GaAs FET.It is suitable for C-BAND amplifier. Features of the S8837A are:(1)high power:P1dB=31dBm at f=8GHz;(2)high gain:G1dB=7dB at f=8GHz;(3)ion implantation. The absolute maximum ratings of the S8837A can be summarized as:(1)drain-source voltage:15V;(2...

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SeekIC No. : 004483371 Detail

S8837A: DescriptionThe S8837A is microwave power GaAs FET.It is suitable for C-BAND amplifier. Features of the S8837A are:(1)high power:P1dB=31dBm at f=8GHz;(2)high gain:G1dB=7dB at f=8GHz;(3)ion implantat...

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Part Number:
S8837A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The S8837A is microwave power GaAs FET.It is suitable for C-BAND amplifier.

Features of the S8837A are:(1)high power:P1dB=31dBm at f=8GHz;(2)high gain:G1dB=7dB at f=8GHz;(3)ion implantation.

The absolute maximum ratings of the S8837A can be summarized as:(1)drain-source voltage:15V;(2)gate-source voltage:-5V;(3)drain current:1.4A;(4)total power dissipation:7.5W;(5)channel temperature:175;(6)storage temperature:-65 to +175.

If you want to know more information such as the electrical characteristics about the S8837A, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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