DescriptionThe S8837A is microwave power GaAs FET.It is suitable for C-BAND amplifier. Features of the S8837A are:(1)high power:P1dB=31dBm at f=8GHz;(2)high gain:G1dB=7dB at f=8GHz;(3)ion implantation. The absolute maximum ratings of the S8837A can be summarized as:(1)drain-source voltage:15V;(2...
S8837A: DescriptionThe S8837A is microwave power GaAs FET.It is suitable for C-BAND amplifier. Features of the S8837A are:(1)high power:P1dB=31dBm at f=8GHz;(2)high gain:G1dB=7dB at f=8GHz;(3)ion implantat...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The S8837A is microwave power GaAs FET.It is suitable for C-BAND amplifier.
Features of the S8837A are:(1)high power:P1dB=31dBm at f=8GHz;(2)high gain:G1dB=7dB at f=8GHz;(3)ion implantation.
The absolute maximum ratings of the S8837A can be summarized as:(1)drain-source voltage:15V;(2)gate-source voltage:-5V;(3)drain current:1.4A;(4)total power dissipation:7.5W;(5)channel temperature:175;(6)storage temperature:-65 to +175.
If you want to know more information such as the electrical characteristics about the S8837A, please download the datasheet in www.seekic.com or www.chinaicmart.com .