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S8835

DescriptionThe S8835 is microwave power GaAs FET.It is suitable for C-BAND amplifier. Features of the S8835 are:(1)high power:P1dB=24dBm at f=8GHz;(2)high gain:G1dB=8dB at f=8GHz;(3)ion implantation. The absolute maximum ratings of the S8835 can be summarized as:(1)drain-source voltage:15V;(2)ga...

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SeekIC No. : 004483370 Detail

S8835: DescriptionThe S8835 is microwave power GaAs FET.It is suitable for C-BAND amplifier. Features of the S8835 are:(1)high power:P1dB=24dBm at f=8GHz;(2)high gain:G1dB=8dB at f=8GHz;(3)ion implantatio...

S8835 Data Sheet

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Part Number:
S8835
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/21

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Description



Description

The S8835 is microwave power GaAs FET.It is suitable for C-BAND amplifier.

Features of the S8835 are:(1)high power:P1dB=24dBm at f=8GHz;(2)high gain:G1dB=8dB at f=8GHz;(3)ion implantation.

The absolute maximum ratings of the S8835 can be summarized as:(1)drain-source voltage:15V;(2)gate-source voltage:-5V;(3)drain current:0.25A;(4)total power dissipation:2.5W;(5)channel temperature:175;(6)storage temperature:-65 to +175.

If you want to know more information such as the electrical characteristics about the S8835, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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