S8550

The S8550 is designed as silicon PNP transistor.

S8550 has three features. The first one is its power dissipation would be 0.625W at Ta=25°C. The second one is its collector current would be -0.5A. The third one is its collector to base voltage would be -40V. That are all the main features.

Some electrical characteristics of S8550 (Ta=25°C unless otherwise specified) have been concluded into several points as follow. Its collector to base breakdown voltage would be min -40V with condition of Ic=-100uA and Ie=0. Its collector to emitter breakdown voltage would be min -25V with condition of Ic=-0.1mA and Ib=0. Its emitter to base breakdown voltage would be min -5V with condition of Ie=-100uA and Ic=0. Its collector cutoff current would be max -0.1uA with condition of Vcb=-40V and Ie=0 and it would be max -0.2uA with condition of Vce=-20V and Ib=0. Its emitter cut-off current would be max -0.1uA with condition of Veb=-3V and Ic=0. Its DC current gain would be min 85 and max 300 with condition of Vce=-1V and Ic=500mA and it would be min 50 with condition of Vce=-1V and Ic=500mA.

Also S8550's collector to emitter saturation voltage would be max -0.6V with condition of Ic=-500mA and Ib=50mA. Its base to emitter saturation voltage would be max -1.2V with condition of Ic=-500mA and Ib=50mA. Its base to emitter voltage would be max -1.4V with condition of Ie=-100 mA. Its transition frequency would be min 150MHz with condition of Vce=-6V and Ic=-20 mA and f=30 MHz. For its hFE, it would be from 85 to 160 for rank B and would be from 120 to 200 for rank C and would be from 160 to 300 for rank D. And so on. If you have any question or suggestion or want know more information of S8550, please contact us for details. Thank you!