S29GL512N11TFI01

The S29GL512N11TFI01 is designed as one kind of 3.0V single power flash memory. This device requires only a single 3.0 volt power supply for both read and write functions, and it enters the CMOS standby mode when the CE# and RESET# pins are both held at VIO ± 0.3 V.

Features of the S29GL512N11TFI01 are:(1)Single power supply operation: Full Voltage range: 3 volt read, erase, and program operations for battery-powered applications;(2)Dual Chip Enable inputs (only in PL129J): Two CE# inputs control selection of each half of the memory space;(3)Both top and bottom boot blocks in one device;(4)Manufactured on 110 nm process technology;(5)Data Retention: 20 years typical;(6)Manufactured on 110 nm MirrorBit process technology;(7)20-year data retention typical;(8)100,000 erase cycles per sector typical.

The absolute maximum ratings of the S29GL512N11TFI01 can be summarized as:(1)Storage Temperature Plastic Packages:65°C to +150°C;(2)Ambient Temperature with Power Applied: 65°C to +125°C;(3)Vcc: -0.5 V to +4.0 V;(4)A9, OE#, and ACC:0.5 V to +12.5 V;(5)All other pins:0.5 V to VCC +0.5 V;(6)Output Short Circuit Current: 200 mA.

The electrical characteristics of this S29GL512N11TFI01 can be summarized as:(1)Input Load Current: ±1.0 A;(2)A9, OE#, RESET# Input Load Current: 35 A;(3)Reset Leakage Current:35 A;(4)Output Leakage Current: ±1.0 A;(5)Vcc Active Write Current: 50 to 90 mA;(6)Vcc Standby Current: 1 to 5 A;(7)Automatic Sleep Mode: 1 to 5 A;(8)Vcc Active Read-While-Program Current: 6 to 90 mA;(9)Voltage for ACC Program Acceleration: 8.5 to 9.5 V;(10)Voltage for Autoselect and Temporary Sector Unprotect: 11.5 to 12.5 V. If you want to know more information about S29GL512N11TFI01, please download the datasheet in www.seekic.com or www.chinaicmart.com .