S29GL016A

Features: -Program Suspend & Resume: read other sectors before programming operation is completed-Erase Suspend & Resume: read/program other sectors before an erase operation is completed-Data# polling & toggle bits provide status-CFI (Common Flash Interface) compliant: allows host sys...

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SeekIC No. : 004481788 Detail

S29GL016A: Features: -Program Suspend & Resume: read other sectors before programming operation is completed-Erase Suspend & Resume: read/program other sectors before an erase operation is completed-Da...

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Part Number:
S29GL016A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

-Program Suspend & Resume: read other sectors before programming operation is completed
-Erase Suspend & Resume: read/program other sectors before an erase operation is completed
-Data# polling & toggle bits provide status
-CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
-Unlock Bypass Program command reduces overall multiple-word programming time




Pinout

  Connection Diagram


Specifications

Storage Temperature, Plastic Packages. . . . . . . . . .  . 65°C to +150°C
Ambient Temperature with Power Applied. . . . . . . . . . 65°C to +125°C
Voltage with Respect to Ground
           VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . .  . . . .0.5 V to +4.0 V
           A9, OE#, ACC and RESET# (Note 2). . . . . . . . . .0.5 V to +12.5 V
           All other pins (Note 1). . . . . . . . . . . . . . . . . . 0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . .  .  . . . . . . . . .200 mA




Description

The S29GL016A devices are 3.0 V single power Flash memory manufac-tured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a 16 Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL016A can be programmed either in the host system or in standard EPROM programmers.

Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage range (VCC) as specified in the Product Selector Guideand the Ordering InformationS29GL016A, Ordering InformationS29GL032A, and Ordering InformationS29GL064A. Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Each device S29GL016A requires only a single 3.0 volt power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired.

The S29GL016A is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture of S29GL016A allows memory sectors to be erased and repro-grammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Device programming and erasure of S29GL016A are initiated through command sequences. Once a program or erase operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.

Hardware data protection measures of S29GL016A include a low VCC detector that automat-ically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combina-tion of sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend/Erase Resume feature of S29GL016A allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resumefeature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation.

The hardware RESET# pin of S29GL016A terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the de-vice, enabling the host system to read boot-up firmware from the Flash memory device.

The S29GL016A reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses are stable for a specified period of time.

The Write Protect (WP#) feature of S29GL016A protects the first or last sector by asserting a logic low on the WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected even during accelerated programming.

The Secured Silicon Sector of S29GL016A provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur.

Spansion MirrorBit flash technology of S29GL016A combines years of Flash memory manufac-turing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simulta-neously via hot-hole assisted erase. The data is programmed using hot electron injection.




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