S29GL256N90TFIR20

The S29GL256N90TFIR20 is designed as one kind of 3.0 volt-only page mode flash memory that has some points of features:(1)Single 3V read / program / erase (2.7-3.6 V);(2)90 nm MirrorBit process technology;(3)8-word/16-byte page read buffer;(4)32-word/64-byte write buffer reduces overall programming time for multiple-word updates;(5)Secured Silicon Sector region: Can be programmed and locked at the factory or by the customer;(6)100,000 erase cycles per sector typical;(7)20-year data retention typical;(8)Suspend and Resume commands for Program and Erase operations;(9)Write operation status bits indicate program and erase operation completion;(10)Unlock Bypass Program command to reduce programming time;(11)Support for CFI (Common Flash Interface);(12)Hardware reset input (RESET#) resets device.

The absolute maximum ratings of the S29GL256N90TFIR20 can be summarized as:(1)Storage Temperature, Plastic Packages:65°C to +150°C;(2)Ambient Temperature with Power Applied:65°C to +125°C;(3)Output Short Circuit Current: 200 mA;(4)Voltage with Respect to Ground All Inputs and I/Os except as noted below:0.5 V to VCC + 0.5 V;(5)Voltage with Respect to Ground A9 and ACC:0.5 V to +12.5 V. If you want to know more information about S29GL256N90TFIR20, please download the datasheet in www.seekic.com or www.chinaicmart.com .