S29GL256N10TFI010

The S29GL256N10TFI010 is designed as one kind of .0V single power flash memory device that is manufactured using 110 nm MirrorBit technology. Features of this device are:(1)Single power supply operation - 3 volt read, erase, and program operations;(2)Manufactured on 110 nm MirrorBit process technology;(3)Compatibility with JEDEC standards;(4)100,000 erase cycles per sector typical;(5)20-year data retention typical;(6)Program Suspend & Resume: read other sectors before programming operation is completed;(7)Advanced Sector Protection;(8)Data# polling & toggle bits provide status.

The absolute maximum ratings of the S29GL256N10TFI010 can be summarized as:(1)Storage Temperature, Plastic Packages:65°C to +150°C;(2)Ambient Temperature with Power Applied:65°C to +125°C;(3)Voltage with Respect to Ground Vcc: 0.5 V to +4.0 V;(4)Output Short Circuit Current: 200 mA. If you want to know more information about the S29GL256N10TFI010, please download the datasheet in www.seekic.com or www.chinaicmart.com .