S29GL128N10TFI020

The S29GL128N10TFI020 is one member of the S29GL128 family which is designed as the 3.0V single power flash memory device that features several levels of sector protection, which can disable both the program and erase operations in certain sectors or sector groups such as Persistent Sector Protection, Password Sector Protection, WP# Hardware Protection and Advanced Sector Protection.

Features of the S29GL128N10TFI020 are:(1)90 ns access time;(2)8-word/16-byte page read buffer;(3)25 ns page read times;(4)100,000 erase cycles per sector typical;(5)16-word/32-byte write buffer reduces overall programming time for multiple-word updates;(6)Low power consumption (typical values at 3.0 V, 5 MHz): 25 mA typical active read current, 50 mA typical erase/program current and 1 A typical standby mode current;(7)20-year data retention typical;(8)Package options is 56-pin TSOP and 64-ball Fortified BGA.

The absolute maximum ratings of the S29GL128N10TFI020 can be summarized as:(1)Storage Temperature, Plastic Packages:65°C to +150°C;(2)Ambient Temperature with Power Applied:65°C to +125°C;(3)Voltage with Respect to Ground Vcc: -0.5 V to +4.0 V;(4)Voltage with Respect to Ground VIO: -0.5 V to +4.0 V;(5)Output Short Circuit Current: 200 mA.

The electrical characteristics of this S29GL128N10TFI020 can be summarized as:(1)A9 Input Load Current: 35 A;(2)Output Leakage Current: ±1.0 A;(3)VCC Intra-Page Read Current: 10 or 20 mA;(4)VCC Active Erase/Program Current: 90 mA;(5)VCC Standby Current: 1 to 5 A;(6)VCC Reset Current: 1 to 5 A. If you want to know more information about S29GL128N10TFI020, please download the datasheet in www.seekic.com or www.chinaicmart.com .