S29GL128N10TFI010

The S29GL128N10TFI010 is a kind of 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes flash memory. The device can be programmed either in the host system or in standard EPROM programmers. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input.

There are some distinctive characteristics of S29GL128N10TFI010 as follows: (1) manufactured on 110 nm MirrorBit process technology; (2) one hundred twenty-eight 64 Kword (128 Kbyte) sectors; (3) compatibility with JEDEC standards; (4) 100,000 erase cycles typical per sector; (5) 100,000 erase cycles per sector typical; (6) 20-year data retention typical; (7) high performance: 90 ns access time, 8-word/16-byte page read buffer, 25 ns page read times and 16-word/32-byte write buffer reduces overall programming time for multiple-word updates; (8) low power consumption (typical values at 3.0 V, 5 MHz): 25 mA typical active read current, 50 mA typical erase/program current and 1 A typical standby mode current; (9) unlock bypass program command reduces overall multiple-word programming time; (10) advanced Sector protection.

What comes next is about the absolute maximum ratings of S29GL128N10TFI010. (1): VCC (voltage with respect to ground) is from -0.5 to +4.0 V; (2): VIO (voltage with respect to ground) is from -0.5 to +4.0 V; (3): A9, OE#, and ACC (voltage with respect to ground) is from -0.5 to +12.5 V; (4): all other pins (voltage with respect to ground) is from -0.5 to VCC+12.5 V; (5): output short circuit current is 200 mA; (6): storage temperature for plastic packages is from -65 to +150; (7): ambient temperature with power applied is from -65 to +125.