RZ2731B60W

The RZ2731B60W has the following features including Interdigitated structure; high emitter efficiency;Diffused emitter ballasting resistors; capable of withstanding a high VSWR and providing excellent current sharing;Gold metallization; ensuring excellent stability of the characteristics and giving a prolonged working life;Multicell geometry; giving good balance of dissipated power and low thermal resistance;Input and output matching cells;simplifying circuit design.

The RZ2731B60W transistor is housed in a metal-ceramic flange envelope (FO-57D).NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2.7 to 3.1 GHz.It is recommended for radar applications.This product contains beryllium oxide. The product is entirely safe provided that the Be0 slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with general industrial or domestic waste.

The RZ2731B60W information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

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