RZ2731B16W

The RZ2731B16W has the following features including Interdigitated structure; high emitter efficiency;Diffused emitter ballasting resistors providing excellent current sharing and withstanding at a high VSWR;Gold metallization realizes very good stability of the characteristics and excellent life time;Multicell geometry gives good balance of dissipated power and low thermal resistance;Input and output matching cell allow an easier design of circuits.

NPN transistor RZ2731B16W in a FO-57D metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C.Intended for use in common base class C broadband pulse power amplifiers in the frequency range 2.7 to 3.1 GHz for radar application.Microwave performance up to Tmb=25 0C in an unneutralized common base class C broadband amplifier.This product contains beryllium oxide.The product is entirely safe provided that the BeO Slab is not damaged.All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.It must never be thrown out with the general industrial or domestic waste.Maximum values under nominal pulse microwave operating conditions.

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