Features: Low on-resistance.Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT6) .Application Power switching, DC / DC converter.Specifications Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 12 V Drain...
RTQ045N03: Features: Low on-resistance.Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT6) .Application Power switching, DC / DC converter.Specifications Parameter Symbol Limits ...
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Parameter |
Symbol |
Limits |
Unit | |
Drain-source voltage |
VDSS |
30 |
V | |
Gate-source voltage |
VGSS |
12 |
V | |
Drain current |
Continuous |
LD |
±4.5 |
A |
Pulsed |
LDP |
±18 |
A | |
Source current (Body diode) |
Continuous |
LS |
1.0 |
A |
Pulsed |
LSP |
4.0 |
A | |
Total power dissipation (TC=25°C) |
PD |
1.25 |
W | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature |
Tstg |
−55~150 |
°C |