MOSFET N-CH 45V 2A TSMT6
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Series: | - | Manufacturer: | Rohm Semiconductor | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Logic Level Gate | ||
Continuous Drain Current : | 15 A | Drain to Source Voltage (Vdss): | 45V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2A, 4.5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1.5V @ 1mA | Gate Charge (Qg) @ Vgs: | 2.3nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 150pF @ 10V | ||
Power - Max: | 1.25W | Mounting Type: | Surface Mount | ||
Package / Case: | SOT-23-6 Thin, TSOT-23-6 | Supplier Device Package: | TSMT6 |